Surface and strain effects on nanoscale layered solids // Surface and strain effects on nanoscale layered solids. - Three-layered heterostructures. Quantum dots under capping layer
английский/Surface and strain effects on nanoscale layered solids / R.V. Goldstein, V.A. Gorodtsov, A.V. Chentsov [et al.].Surface and strain effects on nanoscale layered solids / R.V. Goldstein, V.A. Gorodtsov, A.V. Chentsov [et al.].Surface and strain effects on nanoscale layered solids.Moscow/Taipei/Ин-т проблем механики Рос. акад. наук/, 2007 ( ). - Ин-т проблем механики Рос. акад. наук, 2007. - ; 21 см. - (Preprint / Russ. acad. of science, Inst. for problems in mechanics ; ...).Surface and strain effects on nanoscale layered solids. Moscow, Taipei, 2007 .
В надзаг.: Russ. acad. of sciences, Inst. for problems in mechanics, Nat. Taiwan univ., Graduate inst. of electronics engineering. - Рез. на рус. яз. - Библиогр. в конце томов. Библиогр. в конце томов. - Surface and strain effects on nanoscale layered solids. — Three-layered heterostructures. Quantum dots under capping layerMechanical modeling of quantum dots. Analytical and numerical approachesThe nanosize SiGe islands on Si(001) and Si(110) substrates. The mechanical behavior of the modern MOSFETs Surface and strain effects on nanoscale layered solids. — Three-layered heterostructures. Quantum dots under capping layer. — 28 с. Mechanical modeling of quantum dots. Analytical and numerical approaches. — 2008. — 27 с. The nanosize SiGe islands on Si(001) and Si(110) substrates. The mechanical behavior of the modern MOSFETs. — 2009. — 57 c.Полупроводниковые наноструктуры/З844.1-01/
В надзаг.: Russ. acad. of sciences, Inst. for problems in mechanics, Nat. Taiwan univ., Graduate inst. of electronics engineering. - Рез. на рус. яз. - Библиогр. в конце томов. Библиогр. в конце томов. - Surface and strain effects on nanoscale layered solids. — Three-layered heterostructures. Quantum dots under capping layerMechanical modeling of quantum dots. Analytical and numerical approachesThe nanosize SiGe islands on Si(001) and Si(110) substrates. The mechanical behavior of the modern MOSFETs Surface and strain effects on nanoscale layered solids. — Three-layered heterostructures. Quantum dots under capping layer. — 28 с. Mechanical modeling of quantum dots. Analytical and numerical approaches. — 2008. — 27 с. The nanosize SiGe islands on Si(001) and Si(110) substrates. The mechanical behavior of the modern MOSFETs. — 2009. — 57 c.Полупроводниковые наноструктуры/З844.1-01/