Surface and strain effects on nanoscale layered solids. Pt 3$90: The nanosize SiGe islands on Si(001) and Si(110) substrates. The mechanical behavior of the modern MOSFETs
Ик 2008-4/40 английский/The nanosize SiGe islands on Si(001) and Si(110) substrates. The mechanical behavior of the modern MOSFETs / R.V. Goldstein, V.A. Gorodtsov, P.S. Shushpannikov [et al.].The nanosize SiGe islands on Si(001) and Si(110) substrates. The mechanical behavior of the modern MOSFETs / R.V. Goldstein, V.A. Gorodtsov, P.S. Shushpannikov [et al.].The nanosize SiGe islands on Si(001) and Si(110) substrates. The mechanical behavior of the modern MOSFETs.Б. м./, 2009 ( ). - 2009. - 57 c. : ил.The nanosize SiGe islands on Si(001) and Si(110) substrates. The mechanical behavior of the modern MOSFETs. Б. м., 2009 .
Библиогр.: с. 29-36 (64 назв.). Библиогр.: с. 29-36 (64 назв.).Surface and strain effects on nanoscale layered solids / R.V. Goldstein, V.A. Gorodtsov, A.V. Chentsov [et al.]Pt 3$90The mechanical behavior of the modern MOSFETs/Кремний -- Тонкие пленки -- Механические свойства/Германий -- Тонкие пленки -- Механические свойства/З843.322.106.2/
Библиогр.: с. 29-36 (64 назв.). Библиогр.: с. 29-36 (64 назв.).Surface and strain effects on nanoscale layered solids / R.V. Goldstein, V.A. Gorodtsov, A.V. Chentsov [et al.]Pt 3$90The mechanical behavior of the modern MOSFETs/Кремний -- Тонкие пленки -- Механические свойства/Германий -- Тонкие пленки -- Механические свойства/З843.322.106.2/